Manufacturer Part Number
STW30N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in TO-247-3 package
Product Features and Performance
High breakdown voltage of 650V
Low on-state resistance of 139mΩ
High continuous drain current of 22A at 25°C
Low input capacitance of 2880pF
Power dissipation up to 140W
Operating temperature up to 150°C
Product Advantages
High efficiency
Low switching losses
High reliability
Suitable for high voltage and high power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Gate to Source Voltage (Vgs): ±25V
On-state Resistance (Rds(on)): 139mΩ
Continuous Drain Current (Id): 22A
Input Capacitance (Ciss): 2880pF
Power Dissipation: 140W
Quality and Safety Features
RoHS3 compliant
Robust TO-247-3 package
Compatibility
Suitable for a wide range of high voltage, high power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose
High efficiency and low losses
High reliability and ruggedness
Suitable for demanding high voltage, high power applications
Broad compatibility and widespread use