Manufacturer Part Number
STW33N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in a TO-247-3 package
Suitable for high-frequency, high-power switching applications
Product Features and Performance
600V drain-source voltage
24A continuous drain current at 25°C
130mΩ maximum on-resistance at 12A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1870pF at 100V
Maximum power dissipation of 190W at 25°C
Product Advantages
Excellent switching performance
High power density
Robust design for reliable operation
Key Technical Parameters
Drain-source voltage: 600V
Maximum gate-source voltage: ±25V
Continuous drain current: 24A at 25°C
On-resistance: 130mΩ at 12A, 10V
Input capacitance: 1870pF at 100V
Power dissipation: 190W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-frequency, high-power switching applications
Robust design for reliable operation
Compatibility
TO-247-3 package
Compatible with various high-power switching circuits
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation
Product Lifecycle
Current product
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent switching performance for high-frequency, high-power applications
High power density and robust design for reliable operation
Wide operating temperature range for versatile use
RoHS3 compliance for environmental considerations
Compatible with various high-power switching circuits
