Manufacturer Part Number
STW34N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
650V drain-to-source voltage
110mΩ maximum on-resistance
28A continuous drain current
190W maximum power dissipation
Suitable for high-efficiency power conversion applications
Product Advantages
Low on-resistance for high efficiency
High voltage capability
High current handling
Robust design for reliable operation
Key Technical Parameters
Drain-to-source voltage (Vdss): 650V
Maximum gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 110mΩ
Continuous drain current (Id): 28A
Input capacitance (Ciss): 2700pF
Power dissipation (Ptot): 190W
Quality and Safety Features
ROHS3 compliant
Housed in a TO-247-3 package for reliable thermal performance
Compatibility
Suitable for use in various power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
Current production model, no discontinuation planned
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Robust design for reliable operation
Compatibility with a wide range of power electronics applications
Availability of replacements and upgrades to support long-term use
STW34NB20STMicroelectronicsMOSFET N-CH 200V 34A TO247-3