Manufacturer Part Number
STW35N65DM2
Manufacturer
STMicroelectronics
Introduction
High-performance power MOSFET with improved energy efficiency and reliability
Product Features and Performance
650V breakdown voltage
Low on-resistance of 110mΩ at 16A, 10V
High continuous drain current of 32A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 2540pF at 100V
High power dissipation of 250W at 25°C
Product Advantages
Excellent energy efficiency due to low on-resistance
High reliability and ruggedness
Suitable for high-power, high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 110mΩ @ 16A, 10V
Continuous Drain Current (Id): 32A @ 25°C
Input Capacitance (Ciss): 2540pF @ 100V
Power Dissipation (Ptot): 250W @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal management
Compatibility
Suitable for various high-power, high-voltage applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose
Excellent energy efficiency and low on-resistance
High reliability and ruggedness
Wide operating temperature range
Suitable for high-power, high-voltage applications