Manufacturer Part Number
STW3N150
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel power MOSFET
Product Features and Performance
Maximum drain-to-source voltage (Vdss) of 1500V
Low on-resistance (Rds(on)) of 9Ω @ 1.3A, 10V
Continuous drain current (ID) of 2.5A at 25°C case temperature
Maximum power dissipation of 140W at 25°C case temperature
Wide operating temperature range up to 150°C
Product Advantages
Excellent efficiency and thermal performance
Robust design for high-voltage applications
Suitable for various power conversion and switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 1500V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 9Ω @ 1.3A, 10V
Continuous drain current (ID): 2.5A @ 25°C
Input capacitance (Ciss): 939pF @ 25V
Gate charge (Qg): 29.3nC @ 10V
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for efficient heat dissipation
Compatibility
Suitable for a wide range of power conversion and switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent high-voltage and thermal performance
Efficient power handling capabilities
Robust and reliable design for demanding applications
Suitable for a wide range of power conversion and switching needs
STW40N20 CMH82N25 MOSSTMicroelectronics