Manufacturer Part Number
STW40N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel Power MOSFET with low RDS(on) and optimized for hard switching applications
Product Features and Performance
Drain-to-Source Voltage (VDS) up to 600V
Low on-resistance (RDS(on)) of 88mΩ
Continuous Drain Current (ID) of 34A at 25°C
Wide operating temperature range from -55°C to 150°C
Low input capacitance (Ciss) of 2500pF
Low gate charge (Qg) of 57nC
Product Advantages
Excellent efficiency and performance in hard-switching applications
Reduced conduction and switching losses
Smaller heatsinks and system size
Key Technical Parameters
Drain-to-Source Voltage (VDS): 600V
Gate-to-Source Voltage (VGS): ±25V
On-Resistance (RDS(on)): 88mΩ
Continuous Drain Current (ID): 34A
Input Capacitance (Ciss): 2500pF
Gate Charge (Qg): 57nC
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable operation
Compatibility
Suitable for use in a variety of power electronics applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Welding equipment
Industrial automation and control
Product Lifecycle
This product is currently in active production with no indication of near-term discontinuation. Replacement or upgrade options are available from the manufacturer.
Several Key Reasons to Choose This Product
Excellent efficiency and performance in hard-switching applications
Low on-resistance and gate charge for reduced losses
Wide operating temperature range for reliable operation
RoHS3 compliance for environmental responsibility
Proven performance and reliability of STMicroelectronics technology