Manufacturer Part Number
STW36NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET optimized for automotive applications
Product Features and Performance
600V breakdown voltage
Low RDS(on) of 110mΩ @ 14.5A, 10V
High current capability of 29A (continuous drain current @ 25°C)
Low gate charge of 80.4nC @ 10V
Wide temperature range up to 150°C
Product Advantages
Excellent efficiency and thermal performance
Suitable for high-voltage, high-current automotive applications
Compliant with AEC-Q101 automotive qualification requirements
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-State Resistance (RDS(on)): 110mΩ @ 14.5A, 10V
Continuous Drain Current (ID): 29A @ 25°C
Quality and Safety Features
RoHS3 compliant
Automotive-grade design and manufacturing
Compatibility
Suitable for various high-voltage, high-current automotive applications, such as fuel pumps, electric power steering, and transmissions
Application Areas
Automotive electronics
Industrial power conversion
Renewable energy systems
Product Lifecycle
Currently available, no indication of pending discontinuation
Replacement or upgrade options may be available from STMicroelectronics
Key Reasons to Choose
Excellent efficiency and thermal performance for automotive applications
Robust design and AEC-Q101 qualification for reliable operation
High current capability and low RDS(on) for energy-efficient designs
Wide temperature range and RoHS3 compliance for versatile use
STW36N65M5STMicroelectronics