Manufacturer Part Number
STW35N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance MOSFET transistor designed for power conversion and switching applications
Product Features and Performance
Capable of handling high voltages up to 600V
Low on-resistance (RDS(on)) of 110mΩ
High continuous drain current of 28A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 54nC
Product Advantages
Excellent power efficiency and low losses
Robust design for reliable operation
Suitable for a variety of power conversion and switching applications
Key Technical Parameters
Drain-source voltage (VDS): 600V
Gate-source voltage (VGS): ±25V
On-resistance (RDS(on)): 110mΩ
Continuous drain current (ID): 28A
Input capacitance (CISS): 2400pF
Power dissipation (Pd): 210W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole TO-247-3 package
Compatible with various power electronics and motor control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Industrial and consumer electronics
Product Lifecycle
Currently in production
Available replacement or upgrade options may be considered for future designs
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and robust design for demanding applications
Wide operating temperature range and compatibility
Cost-effective solution for power conversion and switching needs
STW36N65M5STMicroelectronics