Manufacturer Part Number
STW36N55M5
Manufacturer
STMicroelectronics
Introduction
High-performance power MOSFET transistor suitable for various power conversion applications.
Product Features and Performance
550V drain-source voltage
33A continuous drain current at 25°C
80mΩ on-resistance at 16.5A, 10V
2950pF input capacitance at 100V
190W power dissipation at Tc
Product Advantages
Efficient power conversion with low on-resistance
High voltage handling capability
Compact and robust TO-247-3 package
Key Technical Parameters
N-channel MOSFET
550V drain-source voltage
25V gate-source voltage
150°C maximum junction temperature
62nC gate charge at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature, high-power applications
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Current product offering
Replacements and upgrades may be available
Key Reasons to Choose
Excellent power handling and efficiency
Robust and reliable performance
Suitable for a wide range of power conversion applications
Compact and easy to integrate design
STW34NB20 W34NB20STMicroelectronics