Manufacturer Part Number
STW36N60M6
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET for high-power switching applications
Product Features and Performance
600V drain-source voltage
30A continuous drain current
Low on-resistance (99mOhm @ 15A, 10V)
Wide operating temperature range (-55°C to 150°C)
Fast switching speed
High power density
Product Advantages
Excellent efficiency and low power losses
Reliable and robust design
Suitable for high-power switching applications
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 99mOhm @ 15A, 10V
Continuous drain current (Id): 30A (at 25°C)
Input capacitance (Ciss): 1960pF @ 100V
Power dissipation (Pd): 208W (at 25°C)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of high-power switching applications, such as:
Power supplies
Motor drives
Inverters
Converters
Application Areas
Industrial and commercial equipment
Renewable energy systems
Transportation systems
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent efficiency and low power losses for improved system performance
Reliable and robust design for long-term operation
Suitable for a wide range of high-power switching applications
Manufactured to high quality standards for enhanced safety and reliability
STW36N65M5STMicroelectronics