Manufacturer Part Number
STW33N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with high voltage, low on-resistance, and fast switching capabilities.
Product Features and Performance
600V drain-to-source voltage
125mΩ max on-resistance
26A continuous drain current
Fast switching with low gate charge
Suitable for high-frequency, high-efficiency power conversion applications
Product Advantages
Excellent efficiency and power density
Reliable and robust design
Easy to integrate and drive
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 125mΩ @ 13A, 10V
Continuous drain current (Id): 26A
Input capacitance (Ciss): 1781pF @ 100V
Power dissipation (Ptot): 190W
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long-term operation
Compatibility
TO-247-3 package
Suitable for various power conversion applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Welding equipment
Induction heating
Industrial and consumer electronics
Product Lifecycle
Currently available
No end-of-life or replacement announcements
Several Key Reasons to Choose This Product
High-voltage, low on-resistance performance
Fast switching and efficient operation
Reliable and robust design for industrial applications
Easy to integrate and drive
Wide range of power conversion and industrial applications