Manufacturer Part Number
STW30NM60N
Manufacturer
STMicroelectronics
Introduction
The STW30NM60N is a high-performance N-channel MOSFET transistor from STMicroelectronics' MDmesh II series, designed for power switching applications.
Product Features and Performance
600V drain-source voltage (Vdss)
25A continuous drain current (Id) at 25°C
130mΩ maximum on-resistance (Rds(on)) at 12.5A and 10V
2700pF maximum input capacitance (Ciss) at 50V
190W maximum power dissipation at 25°C case temperature
4V maximum gate-source threshold voltage (Vgs(th)) at 250A
Product Advantages
Low on-resistance for high efficiency
High voltage and current handling capabilities
Compact TO-247-3 package for easy integration
Suitable for a wide range of power switching applications
Key Technical Parameters
Vdss: 600V
Vgs(Max): ±30V
Rds(on)(Max): 130mΩ @ 12.5A, 10V
Id(Tc): 25A
Ciss(Max): 2700pF @ 50V
Pd(Max): 190W
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable operation
Suitable for high-temperature environments up to 150°C
Compatibility
TO-247-3 package is widely used in power electronics and industrial applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in active production
Replacements and upgrades available from STMicroelectronics
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and robust design for demanding applications
Wide operating temperature range up to 150°C
Efficient power switching capabilities
Compatibility with common power electronics applications