Manufacturer Part Number
STW26NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
600V drain-to-source voltage rating
Low on-resistance (RDS(on)) of 165mΩ
20A continuous drain current at 25°C
140W maximum power dissipation
Fast switching speed
Robust design for high reliability
Product Advantages
Excellent efficiency for power conversion applications
Compact and easy-to-use TO-247-3 package
Suitable for a wide range of industrial and consumer applications
Key Technical Parameters
Drain-to-source voltage (VDS): 600V
Gate-to-source voltage (VGS): ±30V
Continuous drain current (ID): 20A at 25°C
On-resistance (RDS(on)): 165mΩ at 10A, 10V
Input capacitance (Ciss): 1800pF at 50V
Gate charge (Qg): 60nC at 10V
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for industrial applications
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Welding equipment
Induction heating
Industrial automation and control
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgraded models may become available in the future.
Key Reasons to Choose This Product
Excellent efficiency and low on-resistance for improved power conversion performance
Compact and easy-to-use TO-247-3 package for easy integration
Robust and reliable design for industrial and consumer applications
Wide operating voltage and current range for versatile use
RoHS3 compliance for environmentally-friendly applications
STW26NM50NSTMicroelectronics