Manufacturer Part Number
STW26NM60
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
600V Drain to Source Voltage
30A Continuous Drain Current
135mOhm On-State Resistance
2900pF Input Capacitance
313W Power Dissipation
-55°C to 150°C Operating Temperature Range
Product Advantages
High Voltage and Current Capability
Low On-State Resistance
Suitable for High-Power Applications
Key Technical Parameters
Vdss: 600V
Vgs (Max): ±30V
Rds On (Max): 135mOhm
Id (Tc): 30A
Ciss (Max): 2900pF
Ptot (Max): 313W
Quality and Safety Features
RoHS3 Compliant
TO-247-3 Package
Compatibility
TO-247-3 Mounting Type
MDmesh Series
Application Areas
Power Conversion
Motor Drives
Switching Power Supplies
Industrial Electronics
Product Lifecycle
Currently in Production
Replacement/Upgrade Parts Available
Key Reasons to Choose
High Voltage and Current Capability
Low On-State Resistance for Efficiency
Wide Operating Temperature Range
Proven Reliability in Industrial Applications