Manufacturer Part Number
STW25NM60N
Manufacturer
STMicroelectronics
Introduction
The STW25NM60N is a high-performance N-channel MOSFET transistor from STMicroelectronics' MDmesh II series, designed for a variety of power electronics and switching applications.
Product Features and Performance
600V drain-to-source voltage rating
160mΩ maximum on-resistance at 10.5A, 10V
21A continuous drain current at 25°C
2400pF maximum input capacitance at 50V
160W maximum power dissipation at 25°C
Product Advantages
Excellent switching performance
High power density
Low on-resistance for improved efficiency
Robust design for reliable operation
Key Technical Parameters
N-Channel MOSFET
600V drain-to-source voltage
±25V maximum gate-to-source voltage
150°C maximum junction temperature
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for efficient heat dissipation
Compatibility
Suitable for a wide range of power electronics applications, including inverters, motor drives, and power supplies.
Application Areas
Industrial automation
Renewable energy systems
Home appliances
Power conversion
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and robustness
Compatibility with a wide range of applications
Availability of technical support and resources from STMicroelectronics
STW24N60M2 MOSSTMicroelectronics