Manufacturer Part Number
STW25NM50N
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
500V Drain to Source Voltage (Vdss)
25V Max Gate-Source Voltage (Vgs)
140mOhm Max On-Resistance (Rds(on)) @ 11A, 10V
22A Continuous Drain Current (Id) @ 25°C
2565pF Max Input Capacitance (Ciss) @ 25V
160W Max Power Dissipation (Tc)
N-Channel MOSFET
4V Max Threshold Voltage (Vgs(th)) @ 250A
10V Drive Voltage Range
84nC Max Gate Charge (Qg) @ 10V
Product Advantages
High breakdown voltage
Low on-resistance
Suitable for high power applications
Key Technical Parameters
MOSFET Technology
TO-247-3 Package
-55°C to 150°C Operating Temperature Range
RoHS3 Compliant
Quality and Safety Features
Reliable through-hole mounting
Compliant with RoHS3 directive
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Switching power converters
Industrial electronics
Product Lifecycle
Mature product
Replacements and upgrades available
Key Reasons to Choose
High-performance MOSFET with excellent power handling
Reliable and robust design for demanding applications
RoHS compliance for environmental responsibility
Availability of compatible replacements and upgrades
STW24N60M2 24N60M2STMicroelectronics