Manufacturer Part Number
STW25N60M2-EP
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in a TO-247-3 package
Product Features and Performance
600V drain-source voltage
188mΩ maximum on-resistance at 9A, 10V
18A continuous drain current at 25°C
1090pF maximum input capacitance at 100V
150W maximum power dissipation at Tc
-55°C to 150°C operating temperature range
Product Advantages
Excellent switching performance
Low on-resistance for high efficiency
Robust design for high reliability
Key Technical Parameters
MOSFET technology
N-channel
600V drain-source voltage
±25V maximum gate-source voltage
75V maximum gate threshold voltage at 250A
Quality and Safety Features
RoHS3 compliant
Housed in a reliable TO-247-3 package
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Industrial and home appliances
Power conversion systems
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Upgrades and replacements may be available in the future as technology advances.
Key Reasons to Choose
Excellent switching performance for high efficiency
Low on-resistance for low conduction losses
Robust design for high reliability
Wide operating temperature range
Compatibility with a variety of power electronics applications
STW24N60M2 24N60M2STMicroelectronics