Manufacturer Part Number
STP18N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance MOSFET transistor for power electronics applications
Product Features and Performance
High breakdown voltage of 600V
Low on-resistance (Rds(on)) of 280mΩ
Efficient heat dissipation with TO-220 package
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent electrical characteristics for efficient power conversion
Robust and reliable design for high-power applications
Ease of integration with simple gate drive requirements
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
Continuous Drain Current (Id): 13A at 25°C
Input Capacitance (Ciss): 791pF at 100V
Power Dissipation (Ptot): 110W at 25°C
Quality and Safety Features
RoHS3 compliant for environmental safety
Robust TO-220 package for reliable operation
Compatibility
Suitable for various power electronics applications, such as motor drives, power supplies, and inverters
Application Areas
Industrial automation
Household appliances
Renewable energy systems
Transportation electronics
Product Lifecycle
Currently available, no indication of discontinuation
Several Key Reasons to Choose This Product
Excellent electrical performance for efficient power conversion
Robust and reliable design for high-power applications
Wide operating temperature range for versatile use
Simple gate drive requirements for easy integration
RoHS3 compliance for environmental safety