Manufacturer Part Number
STP18NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET
Product Features and Performance
High drain-to-source voltage up to 600V
Low on-resistance of 290mΩ @ 6.5A, 10V
High continuous drain current of 13A @ 25°C
Fast switching and low gate charge of 34nC @ 10V
Wide operating temperature range up to 150°C
Product Advantages
Excellent power efficiency
Robust and reliable performance
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 290mΩ @ 6.5A, 10V
Continuous Drain Current (Id): 13A @ 25°C
Input Capacitance (Ciss): 1030pF @ 50V
Power Dissipation (Pd): 110W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220 package for efficient heat dissipation
Compatibility
Through-hole mounting
Suitable for various high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial controls
Product Lifecycle
Currently in production
Available replacements or upgrades may exist
Key Reasons to Choose This Product
High power efficiency and reliability
Excellent performance in high-voltage, high-current applications
Robust design and wide operating temperature range
Suitable for various industrial and power electronics applications
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