STP18NM60ND - STMicroelectronics

Manufacturer Part Number

STP18NM60ND

Manufacturer

STMicroelectronics

Introduction

High-performance N-Channel MOSFET

Product Features and Performance

High drain-to-source voltage up to 600V

Low on-resistance of 290mΩ @ 6.5A, 10V

High continuous drain current of 13A @ 25°C

Fast switching and low gate charge of 34nC @ 10V

Wide operating temperature range up to 150°C

Product Advantages

Excellent power efficiency

Robust and reliable performance

Suitable for high-voltage, high-power applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 290mΩ @ 6.5A, 10V

Continuous Drain Current (Id): 13A @ 25°C

Input Capacitance (Ciss): 1030pF @ 50V

Power Dissipation (Pd): 110W @ Tc

Quality and Safety Features

RoHS3 compliant

TO-220 package for efficient heat dissipation

Compatibility

Through-hole mounting

Suitable for various high-voltage, high-power applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Welding equipment

Industrial controls

Product Lifecycle

Currently in production

Available replacements or upgrades may exist

Key Reasons to Choose This Product

High power efficiency and reliability

Excellent performance in high-voltage, high-current applications

Robust design and wide operating temperature range

Suitable for various industrial and power electronics applications