STP18NM80 - STMicroelectronics

Manufacturer Part Number

STP18NM80

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel MOSFET transistor designed for high-voltage power applications.

Product Features and Performance

High drain-source voltage rating of 800V

Low on-resistance of 295mOhm

Continuous drain current of 17A at 25°C

Fast switching speed and low gate charge

Suitable for high-voltage, high-current power conversion applications

Product Advantages

Excellent power handling capability

Efficient and reliable power conversion

Compact and easy to integrate

Key Technical Parameters

Drain-Source Voltage (Vdss): 800V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 295mOhm @ 8.5A, 10V

Continuous Drain Current (Id): 17A @ 25°C

Input Capacitance (Ciss): 2070pF @ 50V

Power Dissipation (Ptot): 190W @ Tc

Quality and Safety Features

ROHS3 compliant

TO-220 package for reliable thermal management

Designed and manufactured to high quality standards

Compatibility

Suitable for use in a wide range of high-voltage power conversion applications, including:

Switching power supplies

Motor drives

Power inverters

Industrial and consumer electronics

Application Areas

High-voltage power conversion

Industrial and consumer electronics

Automotive electronics

Product Lifecycle

This product is an active and widely used MOSFET transistor. There are no plans for discontinuation, and replacement or upgrade options are readily available from STMicroelectronics and other manufacturers.

Key Reasons to Choose This Product

High voltage and current handling capabilities for efficient power conversion

Low on-resistance for low power loss and high efficiency

Fast switching speed and low gate charge for high-frequency operation

Reliable and durable design in a compact TO-220 package

Suitable for a wide range of high-voltage power applications

Backed by the quality and expertise of STMicroelectronics