Manufacturer Part Number
STP18N60DM2
Manufacturer
STMicroelectronics
Introduction
The STP18N60DM2 is a high-performance N-channel MOSFET transistor designed for power switching applications.
Product Features and Performance
600V drain-to-source voltage (Vdss)
12A continuous drain current (Id) at 25°C
295mΩ maximum on-resistance (Rds(on)) at 6A, 10V
800pF maximum input capacitance (Ciss) at 100V
90W maximum power dissipation at Tc
5V maximum gate threshold voltage (Vgs(th)) at 250A
20nC maximum gate charge (Qg) at 10V
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Suitable for a wide range of power conversion and control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 295mΩ @ 6A, 10V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 800pF @ 100V
Power Dissipation (Tc): 90W
Quality and Safety Features
RoHS3 compliant
TO-220 package for secure mounting and heat dissipation
Compatibility
Compatible with a wide range of power electronics and control systems
Application Areas
Power switching and control
Power conversion
Motor drives
Power supplies
Inverters and converters
Product Lifecycle
The STP18N60DM2 is an active and ongoing product offering from STMicroelectronics.
Replacement or upgrade options may be available, depending on application requirements.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Suitable for a wide range of power conversion and control applications
Robust TO-220 package for secure mounting and heat dissipation
RoHS3 compliance for environmental responsibility
STP180NS04ZC-S MOSSTMicroelectronics