Manufacturer Part Number
STP180N4F6
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
High current handling capability up to 120A continuous drain current
Low on-state resistance for high efficiency
High breakdown voltage of 40V
Wide gate-source voltage range of ±20V
Suitable for high-power switching and amplification applications
Product Advantages
Excellent thermal performance with 190W power dissipation
Robust and reliable construction in TO-220 package
Optimized for high-efficiency power conversion designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 190W (Tc)
On-state Resistance (Rds(on)): 4.5mΩ @ 4.5V, 2.6mΩ @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Through-hole mounting in TO-220 package
Application Areas
High-power switching and amplification circuits
Motor drives
Power supplies
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent current handling and thermal performance
Low on-state resistance for high efficiency
Wide operating voltage range
Robust and reliable construction
Optimized for high-power, high-efficiency applications