STP180N10F3 - STMicroelectronics

Manufacturer Part Number

STP180N10F3

Manufacturer

STMicroelectronics

Introduction

High-performance N-Channel power MOSFET transistor with low on-resistance and high current handling capability.

Product Features and Performance

High current capability up to 120A continuous drain current

Low on-resistance of only 5.1mΩ

High voltage rating of 100V

Wide operating temperature range from -55°C to 175°C

Fast switching speed and low gate charge for efficient operation

Robust design with high power dissipation of 315W

Product Advantages

Excellent power handling and efficiency

Suitable for high-current, high-voltage applications

Reliable and durable performance over a wide temperature range

Easy to integrate into power electronic designs

Key Technical Parameters

Drain-Source Voltage (Vdss): 100V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 5.1mΩ @ 60A, 10V

Continuous Drain Current (Id): 120A @ 25°C

Input Capacitance (Ciss): 6665pF @ 25V

Power Dissipation (Tc): 315W

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Through-hole mounting in TO-220 package

Compatible with standard MOSFET gate drive circuits

Application Areas

High-power motor drives

Switch-mode power supplies

Automotive electronics

Industrial power conversion

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power handling and efficiency for high-current, high-voltage applications

Reliable and durable performance over a wide temperature range

Easy integration into power electronic designs

Proven track record and support from a leading semiconductor manufacturer