Manufacturer Part Number
STP18N65M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Part of the MDmesh M2 series
Product Features and Performance
High voltage rating up to 650V
Low on-resistance of 330mΩ @ 6A, 10V
Continuous drain current of 12A at 25°C
Wide operating temperature range up to 150°C
Low input capacitance of 770pF @ 100V
Maximum power dissipation of 110W
Product Advantages
Excellent trade-off between low on-resistance and high voltage capability
High efficiency and low switching losses
Suitable for high power density designs
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Maximum Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 330mΩ @ 6A, 10V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 770pF @ 100V
Power Dissipation (Pd): 110W @ 25°C
Quality and Safety Features
RoHS3 compliant
Proven MDmesh M2 technology for high reliability
Compatibility
Through-hole mounting in TO-220 package
Compatible with various high-power applications
Application Areas
Switched-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Industrial automation and control
Home appliances
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available within the MDmesh M2 series
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
High efficiency and power density
Proven reliability of MDmesh M2 technology
Suitability for a wide range of high-power applications