STP18N65M5 - STMicroelectronics

Manufacturer Part Number

STP18N65M5

Manufacturer

STMicroelectronics

Introduction

High-performance power MOSFET in the MDmesh V series

Designed for high-voltage, high-power switching applications

Product Features and Performance

650V drain-to-source voltage rating

15A continuous drain current at 25°C

220mΩ maximum on-resistance at 7.5A, 10V

Low gate charge of 31nC at 10V

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 1240pF at 100V

Product Advantages

Excellent performance for high-voltage, high-power switching

Efficient power conversion with low on-resistance and gate charge

Reliable operation across wide temperature range

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 650V

Maximum Gate-to-Source Voltage (Vgs): ±25V

Continuous Drain Current (Id) at 25°C: 15A

On-Resistance (Rds(on)) at 7.5A, 10V: 220mΩ

Input Capacitance (Ciss) at 100V: 1240pF

Power Dissipation at 25°C: 110W

Quality and Safety Features

RoHS3 compliant

TO-220 package for reliable through-hole mounting

Compatibility

Suitable for high-voltage, high-power switching applications such as power supplies, motor drives, and inverters

Application Areas

Power supplies

Motor drives

Inverters

Industrial electronics

Product Lifecycle

Active product, no indication of discontinuation

Replacements and upgrades may be available from STMicroelectronics

Key Reasons to Choose This Product

Excellent performance for high-voltage, high-power switching

Efficient power conversion with low on-resistance and gate charge

Reliable operation across wide temperature range

RoHS3 compliance for environmental responsibility

Widely used in industrial and power electronics applications