Manufacturer Part Number
STP19NM50N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Designed for high-power, high-voltage switching applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 500V
Continuous drain current (Id) of 14A at 25°C
On-state resistance (Rds(on)) of 250mΩ at 7A, 10V
Input capacitance (Ciss) of 1000pF at 50V
Power dissipation (Ptot) of 110W at 25°C
Product Advantages
Excellent switching and conduction performance
Robust design for high-voltage and high-current applications
Low on-state resistance for high efficiency
High power density and compact size
Key Technical Parameters
N-channel MOSFET with MDmesh II technology
Drain-to-source voltage (Vdss) of 500V
On-state resistance (Rds(on)) of 250mΩ
Continuous drain current (Id) of 14A at 25°C
Power dissipation (Ptot) of 110W at 25°C
Quality and Safety Features
RoHS3 compliant
TO-220 package for efficient heat dissipation
Robust design for reliable operation
Compatibility
Suitable for high-power, high-voltage switching applications
Compatible with various power electronics systems and circuits
Application Areas
Switching power supplies
Motor drives
Renewable energy systems
Industrial automation and control
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent high-voltage and high-current performance
Efficient and reliable operation with low on-state resistance
Compact and versatile design for various power electronics applications
Robust and RoHS-compliant construction for long-term reliability
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