Manufacturer Part Number
STP18NM60N
Manufacturer
STMicroelectronics
Introduction
Discrete semiconductor product
Single N-channel MOSFET transistor
Product Features and Performance
600V drain-to-source voltage
13A continuous drain current at 25°C
285mΩ maximum on-resistance at 6.5A, 10V
Wide operating temperature range: -55°C to 150°C
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Suitable for a variety of power applications
Key Technical Parameters
Vdss: 600V
Vgs (max): ±25V
Rds(on) (max): 285mΩ
Id (continuous): 13A
Ciss (max): 1000pF
Power dissipation (max): 110W
Quality and Safety Features
ROHS3 compliant
TO-220 package for reliable thermal performance
Compatibility
Suitable for use in various power electronics circuits and applications
Application Areas
Switching power supplies
Motor drives
Inverters
Home appliances
Industrial controls
Product Lifecycle
Currently available, no discontinuation plans known
Key Reasons to Choose
High voltage and current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Reliable TO-220 package
Suitable for a variety of power electronics applications
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