DN3545N3-G - Microchip Technology

Manufacturer Part Number

DN3545N3-G

Manufacturer

Microchip Technology

Introduction

High-Voltage, N-Channel Depletion-Mode MOSFET Transistor

Product Features and Performance

450V Drain-to-Source Voltage Rating

20Ω Maximum On-Resistance at 150mA, 0V Gate-to-Source

136mA Continuous Drain Current at 25°C

360pF Maximum Input Capacitance at 25V Drain-to-Source

Wide Operating Temperature Range of -55°C to 150°C

Product Advantages

Robust High-Voltage Transistor Performance

Low On-Resistance for Efficient Power Switching

Compact TO-92 (TO-226) Package

Depletion-Mode Operation for Simplified Biasing

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 450V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 20Ω @ 150mA, 0V

Continuous Drain Current (Id): 136mA @ 25°C

Input Capacitance (Ciss): 360pF @ 25V

Quality and Safety Features

RoHS3 Compliant

Reliable Performance within Wide Temperature Range

Compatibility

Through-Hole Mounting in TO-92 (TO-226) Package

Application Areas

High-Voltage Power Switching

Motor Control

Industrial and Automotive Electronics

Product Lifecycle

Currently Available

No Immediate Discontinuation Plans

Replacements and Upgrades Available within the Microchip Portfolio

Key Reasons to Choose

Robust High-Voltage Transistor Capability

Low On-Resistance for Efficient Power Switching

Wide Operating Temperature Range

Compact and Reliable TO-92 (TO-226) Package

Simplified Depletion-Mode Operation