DN350T05-7 - Diodes Incorporated

Manufacturer Part Number

DN350T05-7

Manufacturer

Diodes Incorporated

Introduction

High-voltage NPN bipolar junction transistor (BJT)

Product Features and Performance

High voltage capability up to 350V

Low collector-emitter saturation voltage

Wide operating temperature range of -55°C to 150°C

High transition frequency of 50MHz

Suitable for high-speed switching and amplification applications

Product Advantages

Robust and reliable performance

Compact surface mount package

Optimized for cost-effective design

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 350V

Current Collector (Ic) (Max): 500mA

Current Collector Cutoff (Max): 50nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V

Frequency Transition: 50MHz

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Surface mount package (SOT-23-3)

Tape and reel packaging

Application Areas

High-speed switching circuits

Amplification circuits

Power supplies

Industrial and consumer electronics

Product Lifecycle

Currently in active production

Replacements and upgrades available

Key Reasons to Choose This Product

Excellent high-voltage capability up to 350V

Fast switching performance with 50MHz transition frequency

Compact and reliable surface mount package

Wide operating temperature range for versatile applications

Cost-effective solution for high-performance designs