Manufacturer Part Number
MMBT3906LP-7
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
High frequency performance up to 300MHz
Low collector-emitter saturation voltage
Low collector cutoff current
Wide operating temperature range of -55°C to 150°C
Product Advantages
Automotive-grade AEC-Q101 qualified
Compact 3-UFDFN package for space-saving design
Surface mount for efficient board assembly
Key Technical Parameters
Power Rating: 250mW
Collector-Emitter Breakdown Voltage: 40V
Collector Current (Max): 200mA
DC Current Gain (hFE): min. 100 @ 10mA, 1V
Transition Frequency: 300MHz
Quality and Safety Features
RoHS3 compliant
Reliable performance in automotive and industrial applications
Compatibility
Suitable for a wide range of electronic circuits and devices
Application Areas
Automotive electronics
Industrial control systems
General-purpose amplifier and switching circuits
Product Lifecycle
Mature product in active production
Replacement and upgrade options available
Key Reasons to Choose
Proven reliability and performance in automotive-grade applications
Compact size and surface mount design for efficient PCB integration
Wide operating temperature range for harsh environment use
High frequency and low saturation voltage characteristics