MMBT3906LT1G - onsemi

Manufacturer Part Number

MMBT3906LT1G

Manufacturer

onsemi

Introduction

Small-signal PNP bipolar junction transistor (BJT)

Suitable for general-purpose switching and amplifier applications

Product Features and Performance

Low collector-emitter saturation voltage (Vce(sat))

High current gain (hFE)

High transition frequency (fT)

Wide operating temperature range (-55°C to 150°C)

Low power dissipation (300 mW)

Product Advantages

Excellent electrical characteristics

Compact surface-mount package (SOT-23-3)

Reliable and robust design

Suitable for automated assembly

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 40V

Collector Current (IC): 200mA

DC Current Gain (hFE): 100 (min) @ 10mA, 1V

Transition Frequency (fT): 250MHz

Quality and Safety Features

RoHS3 compliant

Qualified to industrial and automotive standards

Compatibility

Suitable for use in a wide range of electronic circuits and applications

Application Areas

General-purpose switching and amplifier circuits

Consumer electronics

Industrial control systems

Automotive electronics

Product Lifecycle

Current production model

Readily available from authorized distributors

Replacement and upgrade options may be available

Key Reasons to Choose This Product

Excellent electrical performance and reliability

Compact and efficient surface-mount package

Broad operating temperature range

RoHS compliance for environmentally-friendly use

Widely adopted and supported by the industry