MMBT3906LP-7B - Diodes Incorporated

Manufacturer Part Number

MMBT3906LP-7B

Manufacturer

Diodes Incorporated

Introduction

PNP Bipolar Junction Transistor (BJT) in a DFN package

Product Features and Performance

Power Rating: 250 mW

Collector-Emitter Breakdown Voltage: 40 V

Collector Current: 200 mA

Collector Cutoff Current: 50 nA

Collector-Emitter Saturation Voltage: 400 mV

DC Current Gain: 100

Transition Frequency: 300 MHz

Product Advantages

Automotive-grade, AEC-Q101 qualified

Small DFN package for compact designs

Excellent electrical performance

Reliable and stable operation

Key Technical Parameters

Package: 3-UFDFN

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Manufactured using reliable and robust processes

Compatibility

Surface mount compatible

Application Areas

Automotive electronics

Industrial control systems

Consumer electronics

General-purpose amplification and switching applications

Product Lifecycle

Currently in production, no known plans for discontinuation. Replacements and upgrades may be available from the manufacturer.

Key Reasons to Choose This Product

Automotive-grade quality and reliability

Excellent electrical performance in a small package

Wide operating temperature range

RoHS3 compliance for environmental friendliness

Proven track record and support from a reputable manufacturer