Manufacturer Part Number
MMBT3906Q-7-F
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar junction transistor (BJT) for general-purpose amplifier and switch applications.
Product Features and Performance
Automotive-grade AEC-Q101 qualified
Wide operating temperature range of -55°C to 150°C
Low collector-emitter saturation voltage of 400mV @ 5mA, 50mA
High frequency transition of 250MHz
High DC current gain of 100 @ 10mA, 1V
Low collector cutoff current of 50nA
Power handling capability of 310mW
Product Advantages
Robust automotive-grade performance
Suitable for high-temperature applications
Efficient switching and amplification
Compact surface-mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 40V
Collector Current (max): 200mA
Power Dissipation (max): 310mW
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
AEC-Q101 qualified for automotive applications
Manufactured in ISO-certified facilities
Reliable and stable performance
Compatibility
Compatible with common PNP BJT applications
Suitable for use in automotive, industrial, and consumer electronics
Application Areas
General-purpose amplifier and switching circuits
Automotive electronics
Industrial control systems
Consumer electronics
Product Lifecycle
Currently an active product
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Robust automotive-grade performance
Wide operating temperature range
Efficient switching and amplification
Compact and reliable surface-mount package
Availability of replacement and upgrade options