Manufacturer Part Number
DN3525N8-G
Manufacturer
Microchip Technology
Introduction
High-voltage, N-channel depletion-mode power MOSFET
Product Features and Performance
Drain-Source Voltage (Vdss) of 250V
Wide operating temperature range of -55°C to 150°C
Low on-resistance (Rds(on)) of 6 ohms at 200mA, 0V
Continuous Drain Current (ID) of 360mA at 25°C
Input Capacitance (Ciss) of 350pF at 25V
Product Advantages
Suitable for high-voltage applications
Robust and reliable performance across wide temperature range
Efficient power handling with low on-resistance
Compact surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 6 ohms at 200mA, 0V
Continuous Drain Current (ID): 360mA at 25°C
Input Capacitance (Ciss): 350pF at 25V
Quality and Safety Features
RoHS3 compliant
TO-243AA (SOT-89) surface-mount package
Designed and manufactured to high quality standards
Compatibility
This MOSFET is suitable for a wide range of high-voltage, high-temperature applications.
Application Areas
Switch-mode power supplies
Motor control circuits
Industrial and medical equipment
Lighting and display systems
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from Microchip Technology.
Key Reasons to Choose This Product
Reliable high-voltage performance across wide temperature range
Efficient power handling with low on-resistance
Compact and easy-to-use surface-mount package
Manufactured to high quality and safety standards
Suitable for a wide range of industrial and consumer applications