DN3535N8-G - Microchip Technology

Manufacturer Part Number

DN3535N8-G

Manufacturer

Microchip Technology

Introduction

The DN3535N8-G is a discrete N-Channel MOSFET transistor from Microchip Technology.

Product Features and Performance

350V Drain to Source Voltage (Vdss)

Voltage range (Vgs) of ±20V

10Ω maximum On-Resistance (Rds(on)) at 150mA, 0V

230mA Continuous Drain Current (Id) at 25°C

360pF maximum Input Capacitance (Ciss) at 25V

Depletion Mode MOSFET

6W maximum Power Dissipation at 25°C

Product Advantages

High voltage capability

Low on-resistance

Reliable performance over wide temperature range

Key Technical Parameters

Drain to Source Voltage (Vdss): 350V

Gate to Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 10Ω @ 150mA, 0V

Continuous Drain Current (Id): 230mA @ 25°C

Input Capacitance (Ciss): 360pF @ 25V

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

TO-243AA (SOT-89) package

Compatibility

Compatible with various electronic circuit designs requiring a high-voltage N-Channel MOSFET

Application Areas

Power management circuits

Switching circuits

Motor control applications

Product Lifecycle

Current production part, no plans for discontinuation

Replacement parts and upgrades available

Key Reasons to Choose

High voltage capability up to 350V

Low on-resistance for efficient performance

Wide operating temperature range from -55°C to 150°C

Reliable and RoHS3 compliant construction

Suitable for a variety of power electronics applications