DN3135K1-G - Microchip Technology

Manufacturer Part Number

DN3135K1-G

Manufacturer

Microchip Technology

Introduction

High-voltage, low-power N-channel depletion-mode MOSFET

Product Features and Performance

Capable of operating at up to 350V drain-to-source voltage

Low on-resistance of 35Ω at 150mA, 0V gate-source voltage

Low input capacitance of 120pF at 25V drain-to-source voltage

Operates over a wide temperature range of -55°C to 150°C

Product Advantages

Suitable for high-voltage, low-power applications

Compact SOT-23-3 surface-mount package

Excellent reliability and durability

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 350V

Gate-to-Source Voltage (Vgs): ±20V

Continuous Drain Current (Id): 72mA at 25°C

On-Resistance (Rds(on)): 35Ω at 150mA, 0V

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Compatible with a wide range of high-voltage, low-power electronic circuits and systems

Application Areas

Switch-mode power supplies

Motor control circuits

Voltage level shifting

High-side load switching

Product Lifecycle

Currently available, no plans for discontinuation

Key Reasons to Choose This Product

Excellent high-voltage, low-power performance

Compact surface-mount package for space-constrained designs

Wide operating temperature range for reliability in diverse environments

RoHS3 compliance for environmental responsibility

Tape and reel packaging for efficient automated assembly