Manufacturer Part Number
STF18N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with MDmesh DM2 technology for power switching applications
Product Features and Performance
Drain-source voltage up to 600V
Low on-resistance of 295mOhm
Continuous drain current up to 13A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 800pF
Maximum power dissipation of 25W
Product Advantages
High efficiency and low switching losses
Robust and reliable design
Suitable for a wide range of power switching applications
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 295mOhm
Continuous drain current (Id): 13A
Input capacitance (Ciss): 800pF
Power dissipation (Tc): 25W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting (TO-220-3 package)
Suitable for various power switching applications
Application Areas
Switched-mode power supplies
Motor drives
Power amplifiers
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently available
No indication of discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose this Product
High efficiency and low switching losses
Robust and reliable design
Wide operating temperature range
Suitable for a variety of power switching applications
RoHS3 compliance for environmental sustainability
STF18N60M2 MOSSTMicroelectronics