Manufacturer Part Number
STF18N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with low on-resistance
Product Features and Performance
600V breakdown voltage
Low on-resistance of 280mΩ
Continuous drain current of 13A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 791pF
Maximum power dissipation of 25W
Product Advantages
High efficiency and low power loss
Robust and reliable performance
Wide range of applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 280mΩ
Continuous Drain Current (Id): 13A
Input Capacitance (Ciss): 791pF
Power Dissipation (Tc): 25W
Quality and Safety Features
ROHS3 compliant
TO-220FP package for reliable performance
Compatibility
Suitable for use in a variety of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Current product offering
Replacement and upgrade options available
Key Reasons to Choose This Product
High efficiency and low power loss for improved system performance
Robust and reliable performance for long-term use
Wide operating temperature range for diverse applications
Compact and easy-to-use TO-220FP package
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