Manufacturer Part Number
STF18NM60N
Manufacturer
STMicroelectronics
Introduction
The STF18NM60N is a high-voltage, high-performance N-channel MOSFET transistor designed for power management applications.
Product Features and Performance
600V drain-to-source voltage
Low on-resistance of 285mΩ @ 6.5A, 10V
High continuous drain current of 13A @ 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1000pF @ 50V
Maximum power dissipation of 30W
Product Advantages
Excellent power handling capabilities
Efficient power conversion with low conduction losses
Suitable for high-voltage, high-current applications
Robust design for reliable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 285mΩ @ 6.5A, 10V
Drain Current (Id): 13A @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
The STF18NM60N is a direct replacement for similar high-voltage, high-current MOSFET transistors in power supply, motor control, and industrial automation applications.
Application Areas
Switched-mode power supplies
Motor drives
Industrial automation equipment
Lighting ballasts
Welding equipment
Product Lifecycle
The STF18NM60N is an active product, and replacement or upgrade options are available from STMicroelectronics.
Key Reasons to Choose This Product
Excellent power handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable operation
RoHS3 compliance for environmentally-friendly applications
Direct replacement for similar high-voltage, high-current MOSFET transistors