Manufacturer Part Number
STF18N65M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET with low on-resistance and high-voltage rating
Product Features and Performance
Optimized for efficient power conversion and control
Extremely low on-resistance for low power loss
High voltage rating up to 650V
Low gate charge and fast switching
Product Advantages
Excellent power efficiency
High reliability and ruggedness
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Maximum Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 330mΩ @ 6A, 10V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 770pF @ 100V
Power Dissipation (Tc): 25W
Quality and Safety Features
RoHS3 compliant
Designed for high-reliability applications
Compatibility
Through-hole mounting (TO-220-3 package)
Compatible with various high-voltage, high-power circuits
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in production
No information on discontinuation or replacement models available
Key Reasons to Choose This Product
Excellent power efficiency and low power loss
High voltage rating and ruggedness for demanding applications
Suitable for a wide range of high-power, high-voltage circuits
Proven reliability and performance from a reputable manufacturer
STF18N60STMicroelectronics