Manufacturer Part Number
STF16N65M5
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel power MOSFET
Product Features and Performance
650V drain-to-source voltage rating
Low on-resistance of 299mΩ at 6A, 10V
12A continuous drain current at 25°C
Low gate charge of 45nC at 10V
Fast switching performance
High power dissipation of 25W at Tc
Product Advantages
Excellent reliability and ruggedness
Suitable for high-voltage, high-power applications
Efficient power conversion and control
Key Technical Parameters
Drain-to-source voltage (Vdss): 650V
Gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 299mΩ @ 6A, 10V
Continuous drain current (Id): 12A @ 25°C
Input capacitance (Ciss): 1250pF @ 100V
Power dissipation (Ptot): 25W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
TO-220-3 package
Compatible with various high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Suitable replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance and reliability for high-voltage, high-power applications
Efficient power conversion and control
Rugged and suitable for harsh environments
Wide range of compatible applications