DN3145N8-G - Microchip Technology

Manufacturer Part Number

DN3145N8-G

Manufacturer

Microchip Technology

Introduction

The DN3145N8-G is a discrete semiconductor product, specifically a Transistors - FETs, MOSFETs - Single device.

Product Features and Performance

RoHS3 compliant

TO-243AA (SOT-89) package

Operating temperature range of -55°C to 150°C

Drain to Source Voltage (Vdss) of 450V

Vgs (Max) of ±20V

Rds On (Max) @ Id, Vgs of 60Ohm @ 100mA, 0V

MOSFET (Metal Oxide) technology

Continuous Drain Current (Id) @ 25°C of 100mA (Tj)

Input Capacitance (Ciss) (Max) @ Vds of 120 pF @ 25 V

Depletion Mode FET Feature

Power Dissipation (Max) of 1.3W (Ta)

N-Channel FET Type

Drive Voltage (Max Rds On, Min Rds On) of 0V

Surface Mount Mounting Type

Product Advantages

Wide operating temperature range

High drain to source voltage

Low on-resistance

Compact surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 450V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 60Ohm @ 100mA, 0V

Continuous Drain Current (Id) @ 25°C: 100mA (Tj)

Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V

Power Dissipation (Max): 1.3W (Ta)

Quality and Safety Features

RoHS3 compliant

Compatibility

Suitable for various electronic applications requiring high voltage, low on-resistance MOSFETs

Application Areas

Suitable for various electronic applications requiring high voltage, low on-resistance MOSFETs

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from Microchip Technology.

Key Reasons to Choose This Product

Wide operating temperature range

High drain to source voltage

Low on-resistance

Compact surface mount package

RoHS3 compliant