Manufacturer Part Number
HAT2169H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
N-channel MOSFET
High-performance power switching transistor
Product Features and Performance
40V drain-to-source voltage
Low on-resistance of 3.5mΩ @ 25A, 10V
High continuous drain current of 50A
High input capacitance of 6650pF
High power dissipation of 30W
Wide operating temperature range up to 150°C
Product Advantages
Excellent power handling capabilities
Efficient power switching
Reliable high-temperature operation
Compact surface mount package
Key Technical Parameters
Drain-to-source voltage (Vdss): 40V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 3.5mΩ @ 25A, 10V
Continuous drain current (Id): 50A
Input capacitance (Ciss): 6650pF @ 10V
Power dissipation (Pd): 30W
Quality and Safety Features
RoHS3 compliant
LFPAK package for surface mount
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable high-temperature operation
Compact and easy to integrate design
Proven performance in various power electronics applications
