Manufacturer Part Number
HAT2172H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
RoHS3 Compliant
LFPAK Surface Mount Package
Operating Temperature up to 150°C
Drain-Source Voltage up to 40V
Gate-Source Voltage up to ±20V
On-Resistance as low as 7.5mΩ
Continuous Drain Current up to 30A
Input Capacitance up to 2420pF
Power Dissipation up to 20W
N-Channel MOSFET Technology
Gate Threshold Voltage up to 3V
Optimal Drive Voltage Range: 7V to 10V
Gate Charge up to 32nC
Product Advantages
Compact surface mount package
High power handling capability
Low on-resistance for efficiency
Wide operating temperature range
Suitable for various power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7.5mΩ
Continuous Drain Current (Id): 30A
Input Capacitance (Ciss): 2420pF
Power Dissipation (Ptot): 20W
Gate Threshold Voltage (Vgs(th)): 3V
Gate Charge (Qg): 32nC
Quality and Safety Features
RoHS3 Compliant
Suitable for high-temperature operations
Compatibility
Designed for a wide range of power electronics applications
Application Areas
Suitable for use in power converters, motor drives, and other power electronics systems
Product Lifecycle
Currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High power handling capability with low on-resistance
Wide operating temperature range for versatile applications
Compact surface mount package for space-constrained designs
Suitable for efficient power conversion and motor control systems
RoHS3 compliance for environmentally-friendly applications
