Manufacturer Part Number
HAT2171H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current Continuous Drain (Id) @ 25°C: 40A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 10 V
Power Dissipation (Max): 25W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Product Advantages
Low on-resistance for efficient power conversion
High current capability
High voltage rating
Surface mount package for space-saving design
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
LFPAK package compatible
Application Areas
Power supplies
Motor drives
Switching regulators
Industrial and consumer electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance and efficiency
High reliability and safety
Compact and space-saving design
Compatibility with common applications
