Manufacturer Part Number
HAT2173H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
The HAT2173H-EL-E is a high-performance N-channel MOSFET transistor designed for a wide range of power management and power conversion applications.
Product Features and Performance
High voltage rating of 100V drain-to-source
Low on-resistance of 15mOhm @ 12.5A, 10V
High continuous drain current of 25A at 25°C
Wide operating temperature range up to 150°C
Low input capacitance of 4350pF @ 10V
Maximum power dissipation of 30W at 25°C
Product Advantages
Excellent efficiency and power density
Efficient heat dissipation
Robust and reliable performance
Compact surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 6V @ 20mA
On-Resistance (Rds(on)): 15mOhm @ 12.5A, 10V
Continuous Drain Current (Id): 25A @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable LFPAK package
Compatibility
Compatible with a wide range of power management and power conversion applications
Application Areas
Power supplies
Motor drives
Industrial automation
Telecommunication equipment
Automotive electronics
Product Lifecycle
Currently available
No plans for discontinuation
Several Key Reasons to Choose This Product
High efficiency and power density
Robust and reliable performance
Excellent thermal management
Compact and space-saving design
Wide operating temperature range
Compliance with industry standards
