Manufacturer Part Number
HAT2170H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance N-channel power MOSFET suitable for a wide range of power conversion and control applications.
Product Features and Performance
Low on-resistance for high efficiency
High current handling capability up to 45A
Fast switching speed
Low gate charge for improved efficiency
Wide operating temperature range up to 150°C
Product Advantages
Excellent thermal performance
Reliable and robust design
Optimized for high-power applications
Key Technical Parameters
Drain-source voltage (Vdss): 40V
Maximum gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 4.2mΩ @ 22.5A, 10V
Continuous drain current (Id): 45A @ 25°C
Quality and Safety Features
RoHS3 compliant
LFPAK package for improved thermal performance
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
Currently available
No information on discontinuation or replacement availability
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and robust design
Optimized for high-power, high-efficiency applications
Wide operating temperature range
RoHS3 compliance for environmentally-friendly use
