Manufacturer Part Number
HAT2168H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
The HAT2168H-EL-E is a high-performance N-channel MOSFET transistor from Renesas Electronics Corporation.
Product Features and Performance
30A continuous drain current at 25°C ambient temperature
30V drain-to-source voltage
9mΩ maximum on-resistance at 15A, 10V
1730pF maximum input capacitance at 10V
15W maximum power dissipation at 25°C case temperature
Designed for high-frequency, high-efficiency power conversion applications
Product Advantages
Low on-resistance for high efficiency
High power handling capability
Compact surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 30A
On-Resistance (Rds(on)): 7.9mΩ
Input Capacitance (Ciss): 1730pF
Power Dissipation (Tc): 15W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C junction temperature
Compatibility
Package: SC-100, SOT-669 LFPAK
Tape and reel packaging
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current production status, no indication of discontinuation
Key Reasons to Choose This Product
High power handling and efficiency for demanding power conversion applications
Compact surface mount package for space-constrained designs
Proven reliability and performance from a reputable semiconductor manufacturer
