Manufacturer Part Number
HAT2166H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
The HAT2166H-EL-E is a high-performance N-Channel MOSFET transistor from Renesas Electronics Corporation.
Product Features and Performance
N-Channel MOSFET transistor
30V drain-to-source voltage
±20V gate-to-source voltage
8mΩ maximum on-resistance at 22.5A, 10V
45A continuous drain current at 25°C
4400pF maximum input capacitance at 10V
25W maximum power dissipation at 25°C
Product Advantages
Excellent on-resistance performance
High current capability
Small surface-mount package
RoHS3 compliant
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 3.8mΩ @ 22.5A, 10V
Continuous drain current (Id): 45A @ 25°C
Input capacitance (Ciss): 4400pF @ 10V
Power dissipation (Pd): 25W @ 25°C
Quality and Safety Features
RoHS3 compliant
LFPAK package for reliability and thermal management
Compatibility
Suitable for a wide range of power electronics and power management applications
Application Areas
Power supplies
Motor drivers
Inverters
Converters
Industrial and automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from Renesas
Key Reasons to Choose This Product
Excellent on-resistance performance for efficient power conversion
High current capability for demanding applications
Small and reliable surface-mount package
RoHS3 compliance for environmental safety
Broad compatibility and suitability for various power electronics applications
