Manufacturer Part Number
HAT2165H-EL-E
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high power dissipation capability.
Product Features and Performance
Very low on-resistance of 3.3 mΩ at 27.5 A, 10 V
High continuous drain current of 55 A at 25°C
Wide operating temperature range up to 150°C
High input capacitance of 5180 pF at 10 V
Fast switching characteristics
Product Advantages
Excellent thermal performance and high power handling
Compact surface mount package for efficient board space utilization
Suitable for high-current, high-power switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 2.5 V at 1 mA
On-Resistance (Rds(on)): 3.3 mΩ at 27.5 A, 10 V
Continuous Drain Current (Id): 55 A at 25°C
Input Capacitance (Ciss): 5180 pF at 10 V
Power Dissipation (Pd): 30 W at Tc
Quality and Safety Features
RoHS3 compliant
LFPAK surface mount package
Compatibility
Suitable for high-power, high-current switching applications such as:
DC-DC converters
Motor drives
Power supplies
Inverters
Application Areas
Industrial automation
Automotive electronics
Power management systems
Consumer electronics
Product Lifecycle
This product is currently in production and available. No discontinuation or replacement plans have been announced.
Key Reasons to Choose This Product
Excellent thermal performance and high power handling capability
Very low on-resistance for efficient power conversion
Compact surface mount package for efficient board space utilization
Suitable for a wide range of high-power, high-current switching applications
Reliable and RoHS3 compliant design
